1.3 μm submilliamp threshold quantum dot micro-lasers on Si
نویسندگان
چکیده
YATING WAN, JUSTIN NORMAN, QIANG LI, M. J. KENNEDY, DI LIANG, CHONG ZHANG, DUANNI HUANG, ZEYU ZHANG, ALAN Y. LIU, ALFREDO TORRES, DAEHWAN JUNG, ARTHUR C. GOSSARD, EVELYN L. HU, KEI MAY LAU, AND JOHN E. BOWERS Department of Electrical and Computer Engineering, University of California Santa Barbara, Santa Barbara, California 93106, USA Department of Electronic and Computer Engineering, Hong Kong University of Science & Technology, Clear Water Bay, Hong Kong Materials Department, University of California Santa Barbara, Santa Barbara, California 93106, USA Hewlett Packard Labs, Hewlett Packard Enterprise, 1501 Page Mill Road, Palo Alto, California 94304, USA School of Engineering and Applied Sciences, Harvard University, Cambridge, Massachusetts 02138, USA e-mail: [email protected] e-mail: [email protected]
منابع مشابه
Sub-mA threshold 1.3 μm CW lasing from electrically pumped micro-rings grown on (001) Si
We demonstrate the first electrically pumped quantum-dot micro-ring lasers epitaxially grown on (001) silicon. Continuous-wave lasing around 1.3 μm was achieved with ultra-low thresholds as small as 0.6 mA and maximum operation temperatures up to 100°C. OCIS codes: (230.5590) Quantum-well, -wire and -dot devices; (140.5960) Semiconductor lasers; (140.3948) Microcavity devices; (160.3130) Integr...
متن کامل1.3-μm InAs/GaAs quantum-dot lasers monolithically grown on Si substrates.
We report the first operation of an electrically pumped 1.3-μm InAs/GaAs quantum-dot laser epitaxially grown on a Si (100) substrate. The laser structure was grown directly on the Si substrate by molecular beam epitaxy. Lasing at 1.302 μm has been demonstrated with threshold current density of 725 A/cm2 and output power of ~26 mW for broad-area lasers with as-cleaved facets at room temperature....
متن کامل1.3-μm InAs quantum-dot micro-disk lasers on V-groove patterned and unpatterned (001) silicon.
We report comparison of lasing dynamics in InAs quantum dot (QD) micro-disk lasers (MDLs) monolithically grown on V-groove patterned and planar Si (001) substrates. TEM characterizations reveal abrupt interfaces and reduced threading dislocations in the QD active regions when using the GaAs-on-V-grooved-Si template. The improved crystalline quality translates into lower threshold power in the o...
متن کاملO-band electrically injected quantum dot micro-ring lasers on on-axis (001) GaP/Si and V-groove Si.
We report statistical comparisons of lasing characteristics in InAs quantum dot (QD) micro-rings directly grown on on-axis (001) GaP/Si and V-groove (001) Si substrates. CW thresholds as low as 3 mA and high temperature operation exceeding 80 °C were simultaneously achieved on the GaP/Si template template with an outer-ring radius of 50 µm and a ring width of 4 μm, while a sub-milliamp threshol...
متن کاملHigh performance InAs quantum dot lasers on silicon substrates by low temperature Pd-GaAs wafer bonding
Articles you may be interested in MBE growth of P-doped 1.3 μm InAs quantum dot lasers on silicon Low-threshold high-quantum-efficiency laterally gain-coupled InGaAs/AlGaAs distributed feedback lasers Appl. 1.3 μm InGaAsP/InP lasers on GaAs substrate fabricated by the surface activated wafer bonding method at room temperature Appl.
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
عنوان ژورنال:
دوره شماره
صفحات -
تاریخ انتشار 2017